IndiumV3, Russie, Analysis, bibRecord, 000295

Resonant Raman scattering in InGaN alloys

Identifieur interne : 000295 ( Russie/Analysis ); précédent : 000294; suivant : 000296

Resonant Raman scattering in InGaN alloys

Auteurs : RBID : Pascal:06-0384076

Descripteurs français

Pascal (Inist)
- Diffusion Raman résonance, Spectre Raman, Transition interbande, Transition optique, Photoluminescence, Bande interdite, Composition chimique, Effet composition, Effet non linéaire, Gallium nitrure, Indium nitrure, InGaN, 7855C, Effet burstein Moss, Paramètre de gauchissement.

English descriptors

KwdEn :
- Bowing parameter, Burstein Moss effect, Chemical composition, Composition effect, Energy gap, Gallium nitrides, Indium nitrides, Interband transitions, Non linear effect, Optical transition, Photoluminescence, Raman spectra, Resonance Raman scattering.

Abstract

A strong resonant behavior of the Raman scattering from LO-phonons in n-InGaN alloys at excitation near the interband absorption threshold was observed. An approach has been developed to describe the resonant Raman cross sectional profile in the presence of a Burstein-Moss shift of the interband optical transitions. It has been shown that a simultaneous study of absorption, photoluminescence, and Raman spectra provides reliable information about the band gap and can be efficient for the alloy characterization. Our data show that the band gap composition dependence of InGaN is characterized by the strongly nonlinear behavior with the large bowing parameter of 2.5-2.6 eV.

Links toward previous steps (curation, corpus...)

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Links to Exploration step

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Le document en format XML

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<author><name>HAI LU</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bowing parameter</term>
<term>Burstein Moss effect</term>
<term>Chemical composition</term>
<term>Composition effect</term>
<term>Energy gap</term>
<term>Gallium nitrides</term>
<term>Indium nitrides</term>
<term>Interband transitions</term>
<term>Non linear effect</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Raman spectra</term>
<term>Resonance Raman scattering</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diffusion Raman résonance</term>
<term>Spectre Raman</term>
<term>Transition interbande</term>
<term>Transition optique</term>
<term>Photoluminescence</term>
<term>Bande interdite</term>
<term>Composition chimique</term>
<term>Effet composition</term>
<term>Effet non linéaire</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>InGaN</term>
<term>7855C</term>
<term>Effet burstein Moss</term>
<term>Paramètre de gauchissement</term>
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<front><div type="abstract" xml:lang="en">A strong resonant behavior of the Raman scattering from LO-phonons in n-InGaN alloys at excitation near the interband absorption threshold was observed. An approach has been developed to describe the resonant Raman cross sectional profile in the presence of a Burstein-Moss shift of the interband optical transitions. It has been shown that a simultaneous study of absorption, photoluminescence, and Raman spectra provides reliable information about the band gap and can be efficient for the alloy characterization. Our data show that the band gap composition dependence of InGaN is characterized by the strongly nonlinear behavior with the large bowing parameter of 2.5-2.6 eV.</div>
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<fC01 i1="01" l="ENG"><s0>A strong resonant behavior of the Raman scattering from LO-phonons in n-InGaN alloys at excitation near the interband absorption threshold was observed. An approach has been developed to describe the resonant Raman cross sectional profile in the presence of a Burstein-Moss shift of the interband optical transitions. It has been shown that a simultaneous study of absorption, photoluminescence, and Raman spectra provides reliable information about the band gap and can be efficient for the alloy characterization. Our data show that the band gap composition dependence of InGaN is characterized by the strongly nonlinear behavior with the large bowing parameter of 2.5-2.6 eV.</s0>
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<s5>52</s5>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICNS-6 International Conference on Nitride Semiconductors</s1>
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Resonant Raman scattering in InGaN alloys

Resonant Raman scattering in InGaN alloys

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